Patent · US Expired

Pulsed arc molecular beam deposition apparatus and methodology

US6702934B1 · kind B1 · utility

5Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 10, 2001
Grant dateMar 9, 2004
Priority date
Expiry dateJul 16, 2021

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/32055
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Deposition of thin films or powders by reactive pulsed arc molecular beam deposition. To produce these films and powders, a reactive or non-reactive gas is pulsed between a pair of electrodes situated within a vacuum chamber. The gas can be either chemically inert, to produce pure cathode material films, or chemically reactive, to produce chemical compounds of the cathode material. A storage capacitor is discharged between the electrode pair during the gas pulse. The gas serves as a carrier to direct and transport the ablated material to a substrate which is placed inline with the gas pulse, on which a film or powder of the electrode material or a chemical compound of the electrode material is then coated.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.