Chemical amplified photoresist compositions
US6703178B2 · kind B2 · utility
11Cited by
7References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 28, 2002 |
| Grant date | Mar 9, 2004 |
| Priority date | — |
| Expiry date | Aug 10, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/111
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention discloses a chemical amplified photoresist composition including a polymer having a repeated unit of the formula (II), wherein R1 is H, haloalkyl group or C1-C4 alkyl group; R2 is hydroxyl group, C1-C8 alkoxy group or C1-C8 thioalkyl group; G is (CH2)n, O or S, wherein n is 0, 1, 2, 3 or 4; Rc is a lactone group; and m is 1, 2 or 3. The chemical amplified photoresist composition of the present invention can be applied to general lithography processes, and particularly to the lithography of ArF, KrF or the like light sources, and exhibit excellent resolution, figures and photosensitivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.