Method of fabricating magnetic random access memory operating based on tunnel magnetroresistance effect
US6703249B2 · kind B2 · utility
52Cited by
2References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 18, 2002 |
| Grant date | Mar 9, 2004 |
| Priority date | — |
| Expiry date | Apr 18, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of manufacturing a magnetic random access memory for excluding stress-induced defects in memory cells. The method is composed of forming a first magnetic film over a substrate, forming a tunnel insulating film on the first magnetic film such that the tunnel insulating film has a curvature, forming a second magnetic film on the tunnel insulating film, and etching the first magnetic film, the tunnel insulating film and the second magnetic film to form a memory cell. The etching is executed such that the curvature is excluded from the memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.