Method for manufacturing semiconductor laser device
US6703254B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2002 |
| Grant date | Mar 9, 2004 |
| Priority date | — |
| Expiry date | May 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0282
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor thin film including a well layer is laminated on a semiconductor substrate, the semiconductor substrate and the semiconductor thin film is cleaved, and a cleavage plane of the semiconductor substrate and the semiconductor thin film, which is obtained by the cleaving, is exposed to an atmosphere produced by decomposition of a gas containing N-atoms under the presence of a heated catalytic substance, thereby a surface layer of the cleavage plane is removed and a nitride layer is formed on the surface. Subsequently, a dielectric film is formed on the cleavage plane. According to the above technique, a natural oxide film formed on the cleavage plane can be removed and also a protective film can be formed by using a catalytic CVD apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.