Solid-state image sensor and method of fabricating the same

US6703256B2 · kind B2 · utility

Assignee

• NEC Electronics Corporation · JP

Inventors

• Tsuyoshi Nagata · Tokyo, JP
• Yasutaka Nakashiba · Tokyo, JP

Key dates

• Filing date: Oct 3, 2001
• Grant date: Mar 9, 2004
• Expiry date: Oct 15, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/8057

Abstract

There is provided a solid-state image sensor including a first region in which light is converted into electricity, and a second region composed of silicide. The second region at least partially forms a boarder area of the first region at a surface of the first region. The solid-state image sensor prevents occurrence of smear.