Production method for shallow trench insulation
US6703287B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2001 |
| Grant date | Mar 9, 2004 |
| Priority date | — |
| Expiry date | May 10, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved method for producing a semiconductor device in which overpolishing is prevented at a chemical mechanical polishing time to eliminate the influence of peripheries on the object part. A plasma oxide film is formed on a semiconductor substrate so as to fill a recess and a trench. With the use of a resist film as a mask, the plasma oxide film is selectively etched to leave an overpolish-preventing support member in a neighborhood of the recess, which is a photo-related mark, for providing a support against overpolishing at a chemical mechanical polishing time. The surface of the semiconductor substrate is polished by chemical mechanical polishing. Thereafter, a nitride film and an oxide film are removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.