Magnetic memory device and manufacturing method thereof
US6703676B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2002 |
| Grant date | Mar 9, 2004 |
| Priority date | — |
| Expiry date | Sep 6, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
TMR elements in a magnetic memory device are formed to be flat to enable their stable operations. A TMR element is formed by putting a tunnel barrier layer being a non-magnetic layer between an upper magnetic layer and a lower magnetic layer, both having a perpendicular magnetic anisotropy. A conductive local connect elongating in a plane is formed on a second plug formed in a contact hole formed in a second and a third inter-layer insulating films. The TMR element is formed on the local connect at a position avoiding a position right above the second plug. The TMR element is connected with the upper surface of the second plug through the local connect. A bit line through which an electric current for applying a magnetic field to the TMR element flows is formed at a position shifted from a position right above the TMR element in a plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.