Spin valve sensor

US6704176B2 · kind B2 · utility

Assignee

• Seagate Technology LLC · US

Inventors

• Alexander Mikhailovich Shukh · Savage, US
• Dimitar V. Dimitrov · Edina, US
• Sining Mao · Savage, US
• Ananth Naman · Edina, US
• Philip A. Seekell · Goffstown, US
• Erli Chen · Montgomery, US
• Lujun Chen · 余新镇, CN

Key dates

• Filing date: Nov 13, 2001
• Grant date: Mar 9, 2004
• Expiry date: Feb 15, 2022

Classification

• Technology area (CPC G): Physics
• CPC primary: G11B2005/3996
• WIPO field: Audio-visual technology
• WIPO sector: Electrical engineering

Abstract

A spin valve sensor for use with a data storage system includes free and pinned ferromagnetic (FM) layers, a conducting layer therebetween, contact leads, free layer biasing elements, and an anti-ferromagnetic (AFM) layer. The pinned layer has opposing ends, which define a width of an active region of the spin valve sensor having a giant magnetoresistive effect in response to applied magnetic fields. The free layer is positioned below the pinned layer and has opposing ends that extend beyond the active region. The contact leads abut the pinned layer and overlay portions of the conducting layer. The free layer biasing elements abut the ends of the free layer and bias a magnetization of the free layer in a longitudinal direction.