High power single mode vertical cavity surface emitting laser
US6704343B2 · kind B2 · utility
22Cited by
8References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2002 |
| Grant date | Mar 9, 2004 |
| Priority date | — |
| Expiry date | Jul 18, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/166
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A single mode high power vertical cavity surface emitting laser (VCSEL) using photonic crystals. A photonic crystal is included in at least one mirror layer of a VCSEL. The reflectivity of the photonic crystal is dependent on the wavelength and incident angle of the photons. The photonic crystal can be formed such that the VCSEL lases at a single mode. Because a single mode is generated, the aperture of the VCSEL can be enlarged to increase the power that is generated by the VCSEL for that mode. The photonic crystal can be used with/without DBR layers. The photonic crystal, in one example, forms an external cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.