Method of manufacturing a semiconductor device with a hydrogen barrier layer
US6706540B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2003 |
| Grant date | Mar 16, 2004 |
| Priority date | — |
| Expiry date | Feb 11, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/312
Abstract
There is provided a semiconductor device which includes a capacitor including a lower electrode, a dielectric film, and an upper electrode, a first protection film formed on the capacitor, a first wiring formed on the first protection film, a first insulating film formed on the first wiring, a second wiring formed on the first insulating film, a second insulating film formed on the second wiring, and at least one of a second protection film formed between the first insulating film and the first wiring to cover at least the capacitor and a third protection film formed on the second insulating film to cover the capacitor and set to an earth potential. Accordingly, the degradation of the ferroelectric capacitor formed under the multi-layered wiring structure can be suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.