Manufacturing of capacitors with metal armatures
US6706589B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2001 |
| Grant date | Mar 16, 2004 |
| Priority date | — |
| Expiry date | Aug 17, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a capacitor with metal armatures in metallization levels above an integrated circuit, including the steps of: depositing over the surface of an integrated circuit an insulating layer having a thickness ranging between 0.5 and 1.5 &mgr;m; digging into the insulating layer to form trenches, of which at least a portion in top view is parallel and separate from one trench to the other; depositing and leveling a metallic material to form conductive lines in the trenches; locally removing the insulating layer to remove it at least from all the intervals separating two conductive lines; conformally depositing a dielectric; and depositing and etching a second metallic material to at least completely fill the intervals between lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.