Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same
US6706646B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2000 |
| Grant date | Mar 16, 2004 |
| Priority date | — |
| Expiry date | Oct 31, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A spin-on glass (SOG) composition and a method of forming a silicon oxide layer utilizing the SOG composition are disclosed. The method includes coating on a semiconductor substrate having a surface discontinuity, an SOG composition containing perhydropolysilazane having a compound of the formula —(SiH2NH)n— wherein n represents a positive integer, a weight average molecular weight within the range of about 4,000 to 8,000, and a molecular weight dispersion within the range of about 3.0 to 4.0, to form a planar SOG layer. The SOG layer is converted to a silicon oxide layer with a planar surface by curing the SOG layer. Also disclosed is a semiconductor device made by the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.