Semiconductor device and method of manufacturing the same
US6707068B2 · kind B2 · utility
35Cited by
6References
36Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 9, 2003 |
| Grant date | Mar 16, 2004 |
| Priority date | — |
| Expiry date | Jun 9, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6721
Abstract
A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.