Active matrix substrate and manufacturing method thereof
US6707513B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2001 |
| Grant date | Mar 16, 2004 |
| Priority date | — |
| Expiry date | Jan 31, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/123
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An active matrix substrate includes a gate electrode, a gate insulating film, a semiconductor layer, a source electrode and a drain electrode, which are sequentially deposited on an insulating substrate. A transparent conductive layer is deposited on the source and drain electrodes so that the transparent conductive layer includes a portion deposited to be substantially the same pattern as those of the source and drain electrodes. The transparent conductive layer is connected to either the source electrode or the drain electrode to form a pixel electrode. A gate line is further included on which the gate insulating film is deposited. The gate line is to be connected to the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.