Semiconductor device and a manufacturing method of the same
US6709880B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 17, 2002 |
| Grant date | Mar 23, 2004 |
| Priority date | — |
| Expiry date | Jul 26, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31757
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
There is disclosed a method for forming micro patterns in a semiconductor integrated circuit device with high productivity and high accuracy. A photolithography having high throughput and electron beam lithography using a reticle and having relatively high throughput and high resolution are selectively used so as to obtain highest throughput while satisfying accuracy and resolution required for each product/layer. In the case of using the electron beam lithography, a non-complementary reticle and a complementary reticle are selectively used so as to obtain highest throughput while satisfying required accuracy and resolution. Thus, productivity and integration can be improved for the semiconductor integrated circuit device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.