Semiconductor device having silicon-rich layer and method of manufacturing such a device

US6709928B1 · kind B1 · utility

Assignee

• Cypress Semiconductor Corporation · US

Inventors

• Fred Jenne · Los Gatos, US
• Loren T. Lancaster · Colorado Springs, US

Key dates

• Filing date: Jul 31, 2001
• Grant date: Mar 23, 2004
• Expiry date: Jul 31, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6893

Abstract

A semiconductor device and method of manufacturing a semiconductor device is disclosed in which a SONOS-type dielectric may include a charge storing dielectric (206) that includes at least one charge trapping dielectric layer (212) formed within. A charge trapping dielectric layer (212) may be a silicon-rich silicon nitride layer that may trap charge that could otherwise tunnel through a charge storing dielectric (206). A method may include forming a tunneling dielectric (302), forming a first portion of a charge storing layer (304-0), forming a charge trapping layer (306), forming a second portion of a charge storing layer (304-1), and forming a top dielectric (308).