Techniques for fabricating a resistor on a flexible base material
US6709944B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2002 |
| Grant date | Mar 23, 2004 |
| Priority date | — |
| Expiry date | Sep 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/1136
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A technique for fabricating a resistor on a flexible substrate. Specifically, at least a portion of a polyimide substrate is activated by exposure to a ion sputter etch techniques. A metal layer is disposed over the activated portion of the substrate, thereby resulting in the formation of a highly resistive metal-carbide region. Interconnect layers are disposed over the metal-carbide region and patterned to form terminals at opposite ends of the metal carbide region. The metal-carbide region is patterned to form a resistor between the terminals. Alternatively, only a selected area of the polyimide substrate is activated. The selected area forms the area in which the metal-carbide region is formed. Interconnect layers are disposed over the metal-carbide region and patterned to form terminals at opposite ends of the metal-carbide region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.