Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6709989B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2001 |
| Grant date | Mar 23, 2004 |
| Priority date | — |
| Expiry date | Jun 21, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor structure including the steps of:providing a silicon substrate having a surface;forming by atomic layer deposition a monocrystalline seed layer on the surface of the silicon substrate; andforming by atomic layer deposition one or more layers of a monocrystalline high dielectric constant oxide on the seed layer,where providing a substrate includes providing a substrate having formed thereon a silicon oxide, and wherein forming by atomic layer deposition a seed layer further includes depositing a layer of a metal oxide onto a surface of the silicon oxide, flushing the layer of metal oxide with an inert gas, and reacting the metal oxide and the silicon oxide to form a monocrystalline silicate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.