Image sensor with performance enhancing structures
US6710370B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2002 |
| Grant date | Mar 23, 2004 |
| Priority date | — |
| Expiry date | Apr 18, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
An image sensor is disclosed including passivation walls extending above the pixel contact pads into a photosensor layer (e.g., amorphous silicon) such that the pixel contact pads are isolated to reduce cross-talk. The passivation walls are formed from SiO2 or SiON to further reduce cross-talk. An embodiment includes metal structures provided under interface regions (e.g., under the passivation walls) separating adjacent pixels that are negatively biased to prevent cross-talk, and optionally extend under the contact pad to increase pixel capacitance. One embodiment omits p-type dopant from the lower amorphous silicon photodiode layer, and additional photodiode material layers are disclosed. Another disclosed sensor structure utilizes a textured surface to increase light absorption. A color filter structure for image sensors is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.