Magnetoresistive effect device utilizing a magnetization-coupling layer which couples adjacent ferromagnetic layers perpendicularly
US6710984B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2000 |
| Grant date | Mar 23, 2004 |
| Priority date | — |
| Expiry date | Aug 23, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistance effect element has two ferromagnetic films separated by an interlayer film coupling the magnetization of one ferromagnetic layer in a direction perpendicular to the magnetization direction of the other ferromagnetic film, with an antiferromagnetic layer disposed adjacent to one of the ferromagnetic layers, and a free magnetic layer disposed adjacent to an antiferromagnetic film. The heat treatment for producing in the free layer a simple magnetic domain and the heat treatment for fixing the magnetizations of the ferromagnetic layers are simultaneously carried out. Thereby, because maintaining a difference between the blocking temperature of the antiferromagnetic layer adjacent to the free layer and the blocking temperature of an antiferromagnetic layer adjacent to the pin layer becomes unnecessary, an antiferromagnetic layer having a high exchange coupling magnetic field and a high blocking temperature can be selected. Also, because the allowable range to the dispersion of the exchange coupling magnetic field is widen, thinning of the film of the antiferromagnetic layer can be realized and the magnetoresistance effect element can be suitably applied to a magneti…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.