Low power gate trigger circuit for controlling a silicon-controlled rectifier circuit
US6710994B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 28, 2001 |
| Grant date | Mar 23, 2004 |
| Priority date | — |
| Expiry date | Jun 3, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0036
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A circuit for controlling a silicon-controlled rectifier includes a high breakdown voltage metal-oxide semiconductor field-effect transistor (MOSFET) connected to drive the gate of the silicon-controlled rectifier. The high breakdown voltage MOSFET is itself controlled by a gate voltage. The power requirements for the gate trigger circuit of a series string silicon-controlled rectifier are greatly reduced by using the high breakdown voltage MOSFET as a gate triggering circuit for the silicon-controlled rectifier. Because the MOSFET consumes little power, a limited power source, such as a snubber capacitor voltage that is developed during the OFF-state of the silicon-controlled rectifier, can be used to power the gate trigger circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.