Patent · US Expired

Integrated optoelectronic circuit and method of fabricating the same

US6711312B1 · kind B1 · utility

10Cited by
14References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 20, 2002
Grant dateMar 23, 2004
Priority date
Expiry dateDec 20, 2022

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02F1/0121
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

The invention comprises a novel combination of microwave and photonic packaging to arrive a compact, self contained MZI modulator. The nature of the NLO polymer, that is, its large electro-optic coefficient reduces the drive requirements for the integrated power amplifier, allowing a small to medium power amplifier to be used. Microwave high density interconnect (HDI) packaging techniques allow the medium power amplifier to be fabricated into a small assembly, which can be mounted directly to the MZI substrate. The integrated amplifier and modulator provides a significant reduced size and lower power, and high bandwidth advantage when compared with existing devices based on inorganic materials.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.