Hybrid semi-physical and data fitting HEMT modeling approach for large signal and non-linear microwave/millimeter wave circuit CAD
US6711723B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2001 |
| Grant date | Mar 23, 2004 |
| Priority date | — |
| Expiry date | Apr 23, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/316
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A hybrid model formed from a semi-physical device model along with an accurate data-fitting model in order to implement a relatively accurate physical device model as a large signal microwave circuit computer-aided design (CAD) tool. The semi-physical device model enables accurate representation of known physical device characteristics and measured bias-dependent characteristics. This model is used to accurately simulate the effect of process variation and environmental changes on bias-dependent characteristics. The data-fitting model is used to model these characteristics with relatively good fidelity. The expressions of the model are constructed to be charge conservative. As such, the model is computationally robust within the harmonic balance algorithms employed by known large signal microwave circuit CAD tools.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.