Device for producing single crystals
US6712904B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 19, 2001 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Sep 19, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1088
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A device is made available for producing monocrystals, for example large-diameter gallium arsenide monocrystals, that has a cylindrical heating appliance with a floor heater (2) and a cover heater (3). The heating surfaces of the floor and the cover heater are considerably larger than the cross-sectional area of the monocrystal to be produced. In addition, an insulator (6) is planned for the reaction space that is designed to prevent a radial heat flow and the guarantee a strictly axial heat flow over the complete height of the reaction space between the cover heater (3) and the floor heater (2).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.