Multilayer structure used especially as a material of high relative permittivity
US6713199B2 · kind B2 · utility
9Cited by
5References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 24, 2002 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Dec 24, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multilayer structure, used especially as a material of high relative permittivity, includes a plurality of separate layers, each having a thickness of less than 500 å, and based on hafnium dioxide (HfD2), zirconium dioxide (ZrO2) and alumina (Al2O3). In practice, the hafnium dioxide, zirconium dioxide and alumina layers form alloys of formula HfxZrAlyOz. Advantageously, the stoichiometry of the HfxZrAlyOz alloys varies from one layer to another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.