Single layer lift-off method for making an electronic device
US6713237B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2001 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | May 8, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49032
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for making a magnetic sensor for a disk drive read head, the method comprising the steps of depositing a magnetoresistive stack on a surface of a first layer of material, depositing a resist layer on a first portion of the magnetoresistive stack, removing a second portion of the magnetoresistive stack not covered by the resist layer, depositing a layer of additional material on the magnetoresistive stack, the resist material, and the surface of the first layer, removing the additional material from sidewalls of the resist material, and using a lift-off process to remove the resist material. Magnetic sensors made by the above process are also included. A method for making a semiconductor device is also provided, the method comprising the steps of depositing a layer of first material on a surface of substrate, depositing a resist layer on a first portion of the first material, removing a second portion of the layer of the first material not covered by the resist layer, depositing a layer of additional material on the first material, the resist layer, and the surface of the substrate, removing the additional material from sidewalls of the resist layer, and using a lift-off pr…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.