Method for making a semiconductor device comprising a stack alternately consisting of silicon layers and dielectric material layers
US6713356B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2002 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Apr 23, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6744
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device consisting of a silicon substrate on which is formed a stack of layers is described. The stack may have successively at least one first and one second combination. Each combination may consist, with reference to the substrate, of a thin bottom SiGe layer and a thin top silicon layer. A thin silicon dioxide film (18) is formed on the thin top silicon layer of the second combination so that the layer concerned supports the layers of the stack on at least two opposite lateral sides of the stack. Successive selective lateral etching of the SiGe layers is then carried out to form tunnels which are filled with a dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.