Method of forming a metal nitride layer over exposed copper
US6713407B1 · kind B1 · utility
19Cited by
5References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 29, 2002 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Oct 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0217
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of depositing a plasma enhanced CVD metal nitride layer over an exposed copper surface in a semiconductor wafer manufacturing process to improve the metal nitride layer adhesion and to reduce copper hillock formation including providing a process surface which is an exposed copper surface; preheating the process surface; plasma sputtering the exposed copper surface in-situ to remove copper oxides; and, depositing a metal nitride layer in-situ according to a plasma enhanced CVD process at a selected deposition pressure to reduce plasma ion bombardment energy transfer and to suppress-copper hillock formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.