Method of producing silica micro-structures from x-ray lithography of SOG materials
US6713408B1 · kind B1 · utility
1Cited by
10References
22Claims
0Family size
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Key dates
| Filing date | Dec 14, 2001 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Feb 8, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/168
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A lithographic method for producing high aspect ratio silica micro-structures having the steps of: providing a carrier substrate with a confinement boundary placed on the carrier substrate; placing the SOG material within the confinement boundary and soft baking at a temperature above its glass transition temperature; forming a pattern of interest on the soft baked SOG material by x-ray lithography; and heating the SOG material until it is substantially converted to a silica-like oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.