Image detection device
US6713748B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 1999 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Jun 22, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/189
Abstract
An image detection device includes a pixel portion (OEF) having a photoelectric conversion film for converting incident light into a signal charge and a pixel capacitor for accumulating the signal charge, and a thin film transistor (TFT1) included in a signal detective circuit operation of which is controlled by a scanning line (G1) to read out the potential of a pixel electrode to a signal line (S1). The transistor (TFT1) having a source or drain connected to the pixel electrode is a TFT having an LDD structure on a high-potential side, a TFT having LDD structures on the high- and low-potential sides in which the LDD length is larger on the high-potential side, or a TFT having a double-gate structure. When the image detection device includes a protective diode (TFT2) for, if the potential of the pixel electrode reaches a predetermined value or more, flowing pixel charges to a bias line (B1) to prevent destruction of the pixel electrode, the transistor (TFT2) has an LDD structure on at least a high-potential side or a double-gate structure. This arrangement can increase the OFF resistance to suppress the leakage current, and can prevent a decrease in S/N ratio owing to leakage of s…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.