Oxide thin film for a bolometer, process for producing the same, and infrared sensor using the same
US6713763B2 · kind B2 · utility
0Cited by
2References
12Claims
0Family size
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Key dates
| Filing date | Nov 7, 2001 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Apr 4, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J5/20
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A thin film made of a cobalt-based oxide represented by YBaCo2O5.5+x (−0.5<x<0.05) is used as a resistor material for a bolometer. Provided is also an infrared sensor having a microbridge structure and using the cobalt-based oxide thin film. The temperature coefficient of the electric resistance thereof can be made large.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.