Junction-side illuminated silicon detector arrays
US6713768B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2001 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Apr 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an entrance window for light, x-ray, gamma ray and/or other particles. The back-side has an array of individual ohmic contact pixels. Each of the ohmic contact pixels on the back-side may be surrounded by a grid or a ring of junction separation implants. Effective pixel size may be changed by separately biasing different sections of the grid. A scintillator may be coupled directly to the entrance window while readout electronics may be coupled directly to the ohmic contact pixels. The detector array may be used as a radiation hardened detector for high-energy physics research or as avalanche imaging arrays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.