Magnetoresistive element, memory element using the magnetoresistive element, and recording/reproduction method for the memory element
US6713830B2 · kind B2 · utility
27Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2002 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Mar 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive element includes first, second, and third magnetic layers and a nonmagnetic layer. The first magnetic layer is magnetized perpendicularly to the film surface. The second magnetic layer is magnetized perpendicularly to the film surface and has a coercive force higher than that of the first magnetic layer. The nonmagnetic layer is inserted between the first and second magnetic layers. The third magnetic layer has a coercive force higher than that of the first magnetic layer and is magnetized antiparallel to the second magnetic layer. A memory element and recording/reproduction method are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.