Semiconductor device having two-layered charge storage electrode
US6713834B2 · kind B2 · utility
58Cited by
6References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2001 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Oct 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first insulation film, a first conductor film, and a cap are sequentially formed on a semiconductor substrate. The first insulation film, the first conductor film, and the cap, and the substrate are etched in the same pattern. A second insulation film is placed in that etched pattern. The cap is removed. A second conductor film is formed on the side face of the second insulation film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.