Metal-insulator-metal device structure inserted into a low k material and the method for making same
US6713840B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2003 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Mar 16, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a metal-insulator-metal (MIM) device structure inserted in a low-k material and the method for forming same. The low-k material has a first low-k material layer at the bottom of the MIM device structure and a second low-k material layer on top thereof. The structure further comprises a first sealing layer on top of the first low-k material layer; an out gas sealing layer on top of the first sealing layer; and a device such as a capacitor formed on top of the out gas sealing layer, the capacitor having a dielectric layer, a top plate, and a bottom plate, wherein the dielectric layer has a center portion having the same width as the top plate, and two extended portions, each with a predetermined minimum thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.