Gate modulation for high power amplifiers
US6714071B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 25, 2001 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Jul 23, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03G3/3047
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high power RF amplifier utilizes dynamic biasing for transistors in an output stage of the amplifier. In one embodiment, as the magnitude of an RF signal to be amplified falls below a predetermined level, the biasing signal is turned off to reduce power consumption. A gate bias voltage is used to switch the transistors off and on. A low pass filter is employed to eliminate noise generated at the output of the amplifier caused by the instantaneous switching, while not impacting the amplifier's response to low-high magnitude transients. In a further embodiment, I and Q data from baseband digital data is sampled and buffered prior to being transformed and provided to a RF power amplifier. A gate bias signal is controlled based on current samples in order to control the power amplifier in a manner appropriate for the current samples when provided from the buffer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.