Method of fabricating thin film bulk acoustic resonator (FBAR) and FBAR structure embodying the method
US6714102B2 · kind B2 · utility
78Cited by
14References
16Claims
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Key dates
| Filing date | Mar 1, 2001 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Jun 15, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H3/02
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method for fabricating an acoustic resonator, for example a Thin Film Bulk Acoustic Resonators (FBAR), on a substrate. A depression is etched and filled with sacrificial material. The FBAR is fabricated on the substrate spanning the depression, the FBAR having an etch hole. The depression may include etch channels in which case the FBAR may include etch holes aligned with the etch channels. A resonator resulting from the application of the technique is suspended in air and includes at least one etch hole and may include etch channels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.