Patent · US Expired

Magnetoresistive sensor, magnetoresistive head, and magnetic recording/reproducing apparatus

US6714374B1 · kind B1 · utility

17Cited by
13References
90Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 31, 2000
Grant dateMar 30, 2004
Priority date
Expiry dateAug 31, 2020

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11B2005/0016
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

A magnetoresistive sensor includes a magnetoresistive element and equipment which generates a magnetic field in the magnetoresistive element thereby inducing a biasing magnetic field in the element, where the magnetoresistive element comprises a high electron mobility semiconductor and electrodes which are connected to the semiconductor. If it is an insulator, the equipment, which generates the biasing magnetic field and supplies it to the magnetoresistive element, may contact directly to the magnetoresistive element. If it is a conductor, an insulating separation layer must be set between the equipment and the element. A magnetoresistive element is representatively Corbino disk type or a bar type magnetoresistive element. Another candidate of the magnetoresistive element is an element consisting of a high electron mobility semiconductor, a pair of electrodes which make a current path in the high electron mobility semiconductor, and another pair of electrodes to detect the induced voltage by the current.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.