Monolithically integrated optically-pumped edge-emitting semiconductor laser
US6714574B2 · kind B2 · utility
9Cited by
11References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2001 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Nov 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4056
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention features an edge-emitting semiconductor signal laser having an active region to produce laser light. There is provided a semiconductor pump laser monolithically integrated with the edge-emitting signal laser. The pump laser includes a photon emissive active region to provide photopumping of the active region of the edge-emitting signal laser, thereby providing optical excitation of the active region of the signal laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.