Ferrite film formation method
US6716488B2 · kind B2 · utility
3Cited by
8References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2001 |
| Grant date | Apr 6, 2004 |
| Priority date | — |
| Expiry date | Jul 30, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2111/00422
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A ferrite layer formation process that may be performed at a lower temperature than conventional ferrite formation processes. The formation process may produce highly anisotropic structures. A ferrite layer is deposited on a substrate while the substrate is exposed to a magnetic field. An intermediate layer may be positioned between the substrate and the ferrite to promote bonding of the ferrite to the substrate. The process may be performed at temperatures less than 300° C. Ferrite film anisotropy may be achieved by embodiments of the invention in the range of about 1000 dyn-cm/cm3 to about 2×106 dyn-cm/cm3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.