Light-emitting diode with enhanced brightness and method for fabricating the same
US6716654B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2002 |
| Grant date | Apr 6, 2004 |
| Priority date | — |
| Expiry date | Mar 16, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a light-emitting diode with enhanced brightness and a method for fabricating the same. The light-emitting diode comprises: an epitaxial LED structure having at least one lighting-emitting active layer with a plurality of spacers inside the lighting-emitting active layer; at least one conductive contact, formed on the bottom surface where no spacer is formed inside the lighting-emitting active layer; a transparent material layer formed in the spacers; an adhesion layer formed between the transparent material layer and a permanent substrate; a bottom electrode formed on the bottom surface of the permanent substrate; and an opposed electrode formed on the top surface of the epitaxial LED structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.