Polycrystalline thin film and method of producing the same and oxide superconductor and method of producing the same
US6716796B1 · kind B1 · utility
3Cited by
10References
8Claims
0Family size
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Key dates
| Filing date | Jun 11, 2001 |
| Grant date | Apr 6, 2004 |
| Priority date | — |
| Expiry date | Jan 29, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E40/60
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A polycrystalline thin film B consisting mainly of oxide crystal grains 20 which have a crystal structure of a Type C rare earth oxide represented by one of the formulas Y2O3, Sc2O3, Nd2O3, Sm2O3, Eu2O3, Gd2O3, Tb2O3, Dy2O3, Ho2O3, Er2O3, Yb2O3, Lu2O3, and Pm2O3 formed on a film forming surface of a polycrystalline substrate A wherein grain boundary inclination angles between the corresponding crystal axes of different crystal grains in the polycrystalline thin film along a plane parallel to the film forming surface of the polycrystalline substrate are controlled within 30 degrees.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.