Semiconductor device and the manufacturing method thereof
US6717243B2 · kind B2 · utility
4Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2002 |
| Grant date | Apr 6, 2004 |
| Priority date | — |
| Expiry date | Jun 28, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a bump electrode formed on a flat surface of a passivation film of the device. The bump electrode is connected to a top wiring layer through a plurality of openings in the passivation film underneath the bump electrode, which are filled with a conductive material. The bump electrode is formed away from via holes, which connects the top wiring layer for the bump electrode and a lower wiring layer connected to source and drain layers of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.