Light emitting diode with gradient index layering

US6717362B1 · kind B1 · utility

Assignee

• AGILENT TECHNOLOGIES, INC. · US

Inventors

• Boon K. Lee · Leander, US
• Kee Siang Goh · Bukit Mertajam, MY
• Yee Loong Chin · Batu Gajah, MY
• Chen Why Tan · Bukit Mertajam, MY

Key dates

• Filing date: Feb 20, 2003
• Grant date: Apr 6, 2004
• Expiry date: Feb 20, 2023

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S362/80

Abstract

A light emitting diode (100) is disclosed comprising a p-n junction diode for emitting light; and a transparent casing encapsulating the p-n junction diode. The transparent casing having an inner portion in contact with the p-n junction diode, wherein the refractive index of the transparent casing is higher at the inner portion than an outer portion thereof. In one embodiment the transparent casing comprises at least a first and a second transparent layer, with the first transparent layer encapsulating the p-n junction diode, and the second transparent layer encapsulating the first transparent layer, wherein the refractive index of the first transparent layer is higher than the refractive index of the second transparent layer. In an alternative embodiment the transparent casing comprises at least one transparent layer, wherein the refractive index of the transparent layer is higher at an inner portion than an outer portion thereof.