Method of production of spin valve type giant magnetoresistive thin film
US6720036B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2002 |
| Grant date | Apr 13, 2004 |
| Priority date | — |
| Expiry date | Sep 10, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/325
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A production method of the present invention is a method of producing a spin valve type giant magnetoresistive thin film. In this production method, a buffer layer, an antiferromagnetic layer, a fixed magnetization layer, a nonmagnetic conductive layer, a free magnetization layer, and a protective layer are consecutively stacked on a substrate. Furter, plasma treatment is performed on predetermined stacked interfaces in the spin valve type giant magnetoresistive thin film to reduce the interlayer coupling magnetic field acting between the fixed magnetization layer and the free magnetization layer and to obtain a high MR ratio. The above production method can achieve both of the high MR ratio and low interlayer coupling magnetic field (Hin) in the thin film produced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.