Vapor controlled czochralski (VCZ) single crystal growth apparatus
US6720509B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2001 |
| Grant date | Apr 13, 2004 |
| Priority date | — |
| Expiry date | Feb 20, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1072
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to semiconductor crystal growth equipments. A vapor controlled czochralski (VCZ) single crystal growth apparatus comprises a single crystal furnace, a heating unit, a mechanical transmission unit, and a gaseous adjustment unit. A hot-wall sealed container is mounted in the single crystal furnace, and a crucible is mounted within the hot-wall sealed container. The hot-wall sealed container includes an upper container part and a lower container part. A sealing connection device is provided between the upper and lower container parts. A crucible-transmitting shaft and a seed shaft are inserted into the hot-wall sealed container through respective sealing devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.