Infrared sensor
US6720559B2 · kind B2 · utility
2Cited by
1References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 16, 2001 |
| Grant date | Apr 13, 2004 |
| Priority date | — |
| Expiry date | May 16, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J5/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An infrared sensor is provided, which includes a substrate 12, a diaphragm 14 supported by the substrate, at least one thermocouple 17 provided with a cold junction 20 formed on the substrate and a hot junction 18 formed on the diaphragm, and an infrared-absorptive film 24 formed on the diaphragm so as to cover the hot junction of the thermocouple. The area of the infrared-absorptive film is 64% to 100% of the area of the diaphragm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.