Semiconductor device and method of manufacturing the same
US6720577B2 · kind B2 · utility
24Cited by
6References
38Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2001 |
| Grant date | Apr 13, 2004 |
| Priority date | — |
| Expiry date | Aug 31, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/12
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a semiconductor device having a substrate which has a metal surface, an insulating film which is formed on the substrate having the metal surface, and a pixel unit which is formed on the insulating film; the pixel unit includes a TFT, and wiring lines connected with the TFT, and a storage capacitor is constituted by the substrate (11) having the metal surface, the insulating film (12), and the wiring line (21). As the insulating film is thinner, and as the area of a region where the insulating film and the wiring line lie in contact is larger, the storage capacitor is endowed with a larger capacity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.