Image sensor array with reduced pixel crosstalk
US6720594B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2002 |
| Grant date | Apr 13, 2004 |
| Priority date | — |
| Expiry date | Jan 7, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/2235
Abstract
Improved pixel circuits are disclosed for high fill-factor large area imager systems using continuous (e.g., amorphous silicon) sensor layers. A first approach prevents crosstalk by ensuring that each pixel is not able to go into saturation. A second approach employs a cascode transistor to maintain the bias of the sensor contact at a constant potential regardless of illumination condition. These two approaches may be combined. A resistive film connecting the pixel contacts may be used in conjunction with the second approach to prevent aliasing of signal and noise.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.