Thin film field effect transistor
US6720617B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 23, 2001 |
| Grant date | Apr 13, 2004 |
| Priority date | — |
| Expiry date | Jun 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6728
Abstract
A thin film semiconductor-on-insulator FET and a method of its fabrication are presented. The FET comprises a substantially vertically extending semiconductor channel formed between two, parallel, horizontally extending source and drain electrodes. A lower one of the source and drain electrodes is formed in a groove made in the surface of an insulator substrate. The semiconductor channel is defined by a super structure of semiconductor layers located within a periphery region of a conical-shaped structure which is surrounded by an insulator layer located above the lower electrode, the tip of the conical-shaped structure being in contact with this electrode. A gate electrode on gate oxide is located within a central region of the conical-shaped structure. The other upper one of the source and drain electrodes is associated with the base of the conical-shaped structure extending in a plane parallel to the lower electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.